סמינר מחלקה אלקטרוניקה פיזיקאלית: Jenia Elkind

12 בספטמבר 2019, 11:00 
פקולטה להנדסה, בניין כיתות, חדר 011 
סמינר מחלקה אלקטרוניקה פיזיקאלית: Jenia Elkind

סמינר גניה

You are invited to attend a lecture
Millimeter-wave and THz CMOS Receivers
Near and Beyond Transistor Cut-Off Frequencies
By:
Jenia Elkind
Ph.D student under supervision of Prof. Eran Socher

Abstract

High frequency technology has become one of the most increasingly thriving fields in the modern world. The newly available semiconductor electronics which enable transmitting and receiving at millimeter waves, sub Terahertz and even Terahertz frequencies, has made the availability of ultra-fast, wide band information flow closer than ever. The recent advances, especially in silicon technologies, created increasing opportunities to lower the cost, and deliver feasible solutions for the increasing need of high frequency, efficient, front-end circuits. Nevertheless, the difficulties and challenges in delivering high frequency highly efficient front-end circuits until now have not been fully solved. The frequency limitations of the transistor, which is the most basic circuit building block, still act as a bottleneck in most of the front-end circuits – from simple switches, to phase shifters, mixers and amplifiers. Despite the progress of semiconductor technology nodes, the transistor maximum operation frequency is not increasing as fast as the reduction in transistor channel lengths, and the circuit performance decreases as the operation frequency increases.    
This work provides a wide overview of different receiver front end components, and aims at revealing new capabilities at the increasing operation frequencies – from V and W bands, around 60 GHz and 95 GHz, to the most challenging D and G bands centering at 160 GHz and 200 GHz.

On Thursday, September 12, 2019, 11:00
Room 011, EE-class building

אוניברסיטת תל-אביב, ת.ד. 39040, תל-אביב 6997801
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