סמינר מחלקתי - אלקטרוניקה פיזיקאלית - טלי דותן

22 במרץ 2017, 10:00 
אוניברסיטת תל אביב בית ספר להנדסת חשמל ביניין וולפסון חדר 234 
סמינר מחלקתי - אלקטרוניקה פיזיקאלית - טלי דותן

You are invited to attend a lecture

Precursor effects on Self-Assembled Monolayer (SAM) Cu Barrier Properties

for Sub-22 nm CMOS

By:
Tali Dotan

M.Sc student under supervision of Prof. Yosi  Shacham-Diamand

Abstract
The purpose of this work was to study various Self Assembled Monolayers (SAM) as barrier layers in microelectronics. Recent reports have shown that organic Self Assembled monolayer (SAM) can be used as barrier layers against Cu diffusion for VLSI interconnect applications. In our work silanization was performed by chemical method from solutions, containing 1-2% silane in ethanol as a solvent. 7 different silanes were used and their barrier properties were measured using a "sandwich" Cu (100 nm)/SAM/Si structure. The barrier effectiveness was tested by vacuum annealing at the 200-500˚C range for periods up to 12 hours. Results reveal that N-[3-(Trimethoxysilyl)propyl]aniline and M-Aminophenyl-trimethoxysilane of the thickness of ~ 2 nm are the most effective and suitable barriers. They both have a head group of trimethoxy.  One has a phenyl terminal group acting as a bulky barrier and the other an amino group that most likely forms Cu-N complex. XPS analysis is used to characterize the failure mechanism of the diffusion barriers and to validate the formation of copper silicide in the Cu/Si interface. Our results suggest that SAMs with appropriate terminal groups could be used to as barrier layer for in advanced ULSI interconnect technology. The method discussed in our work, using Cu/SAM/Si as a test structure is assumed to be predictive for the SAM effectiveness for Cu low-K metallization; however, this should be further tested.

On Wednesday, March 22, 2017, 10:00
Room 234, Wolfson building

אוניברסיטת תל-אביב, ת.ד. 39040, תל-אביב 6997801
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