30/12/15 Yuval Dafna

You are invited to attend a lecture

By

Yuval Dafna

M.Sc. student of Professor Eran Socher

Co-adviser: Professor Emanuel Cohen, Technion

Electrical Engineering, Physical Electronics Department

Tel Aviv University

DIRECT DIGITAL TO D-BAND TRANSSMITTER FOR TENS OF Gb/s COMMUNICATION IN NANO-METER CMOS

Abstract

This talk will discuss the design of a millimeter-wave direct conversion transmitter for wireless chip-to-chip communication in 28-nm CMOS. The talk will focus on the design of a wide band 95-140GHz PA and the design of a full transmitter chain including: baseband buffer and active DAC-mixer design.

The PA consists of three differential pair’s stages. Low K transformers were used as matching networks to achieve high bandwidth while maintaining relatively low losses. Cross couple neutralization technique is used in order to maintain stability and increase gain. Stages layout was optimized in order to reduce parasitic losses and increase the PA gain.

The transmitter is a direct conversion transmitter with four baseband circuits driving DAC-Mixer and one PA stage. The transmitter is capable supporting up to 16-QAM modulation.

Both designs were taped out in 28nm CMOS technology and measured using millimeter wave probe station. The PA measured gain is above 10dB across 95-140GHz. The OP1dB is above 0dBm and the saturation power is 6dBm. The transmitter operates in the frequency regime of 100-130GHz, reaches up to -1dBm output power, consumes 84mW and achieves data rate of 27Gbps with QPSK modulation and without any digital calibrations (for example LO or IQ).  The Transmitter measured EVM with digital DPD and IQ imbalance is -23dB.

Wednesday, 30 December 2015, at 11:00

Room 206, Wolfson Mechanical Engineering Building