30/12/15

You are invited to attend a lecture

By

Tom Heller

M.Sc. student of Professor Eran Socher

Co-adviser: Professor Emanuel Cohen, Technion

Electrical Engineering, Physical Electronics Department

Tel Aviv University

An F-Band IQ Receiver Front-end in 28 nm CMOS

Abstract

This talk will discuss the design of a millimeter-wave F-band zero-IF receiver front-end for wireless chip-to-chip communication in 28-nm CMOS. The talk will focus on the design of the LNA chain and the quadrature splitter, but will also discuss the passive ring mixer and zero-IF buffers.

The LNA consists of a chain of four capacitively neutralized differential pairs. Dissipative losses, a major cause of noise figure degradation, are minimized by choosing appropriate LNA device dimensions and neutralization capacitors. The effect of capacitive neutralization on the minimum noise figure and noise sensitivity of a differential pair will also be discussed.

The quadrature splitter, which provides the I and Q carrier signals, can be tuned over a wide LO bandwidth. The splitter is implemented as a transformer-based directional coupler with an isolation port terminated by a tunable load impedance.

The receiver front-end consumes 18 mW from a 1 V supply and is driven by a -4 dBm F-band LO signal power. The zero-IF chain, used for testing purposes, consumes 33 mW from a 1.5 V supply.

Wednesday, 30 December 2015, at 9:30

Room 206, Wolfson Mechanical Engineering Building