סטודנטים.ות בפקולטה להנדסה ובמחלקה למדעי המחשב הינכם.ן מוזמנים.ות לכנס שעורכת חברת גוגל בסימן יום האישה הבינלאומי 2023.

אל הכנס מוזמנים כל הסטודנטים.ות, החוקרים.ות והסגל. 

מתי? ימים רביעי וחמישי ה 15-16.03.23

שעה: החל מהשעה 17:00 ב15.03.23 ולפי הלוז שמפורסם 

איפה? לכל הרצאה בלוז יש קישור ייעודי

על מנת להירשם יש להיכנס לאתר האירוע ולהירשם באמצעות חשבון האי-מייל 

סטודנטים.ות להנדסת חשמל ומדעי המחשב חברת NVIDIA מגיעה לפגוש אתכם.ן, וכל מה שאתם צריכים.ות לעשות זה להירשם ולהתחבר מכל מקום שתרצו!

נתחיל מהרצאה בנושא AI Video Analytics SDKs, ונעבור לסדנת זכויות והטבות תעסוקתיות.

בסוף נשאיר גם זמן לשאלות על כל דבר שהייתם רוצים לדעת.

1. NVIDIA AI Video Analytics SDKs  -Learn how NVIDIA AI Video Analytics SDKs and Models enable new applications fast

2. It’s all about the money? – בואו לשמוע על זכויות והטבות תעסוקתיות מצוות הגיוס של אנבידיה!

את האתגרים שבכניסה לתפקיד הראשון בתעשייה כולנו מכירים, אבל מה קורה כשמקבלים הצעת עבודה? איזה דברים חשוב שניקח בחשבון לפני שחותמים על חוזה תעסוקתי?  על כל אלה ועוד נרחיב בהרצאה זו.

אל תפספסו! -הירשמו והבטיחו את מקומותיכם

בתום ההרשמה יישלח אליכם לינק להשתתפות בהרצאה

LMI Seminar:

Strong Light-Matter Interactions in Low-Dimensional Excitonic Semiconductors

Prof. Deep Jariwala

Professor in the Department of Electrical and Systems Engineering at the

University of Pennsylvania (Penn)

Wednesday  March  15^th,  2023

10:30-11:30

Light refreshments and drinks will be served at 10:00

Auditorium 011, Engineering Classroom Building,  Faculty of Engineering, Tel-Aviv University

Abstract:

 The isolation of stable atomically thin two-dimensional (2D) materials on arbitrary substrates has led to a revolution in solid state physics and semiconductor device research over the past decade. A variety of other 2D materials (including semiconductors) with varying properties have been isolated raising the prospects for devices assembled by van der Waals forces.1 Particularly, these van der Waals bonded semiconductors exhibit strong excitonic resonances2 and large optical dielectric constants as compared to bulk 3D semiconductors.   .       

       First, I will focus on the subject of strong light-matter coupling in excitonic 2D semiconductors, namely chalcogenides of Mo and W. Visible spectrum band-gaps with strong excitonic absorption makes transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as attractive candidates for investigating strong light-matter interaction formation of hybrid states.3-5 I will present our recent work on the fundamental physics of light trapping in multi-layer TMDCs when coupled to plasmonic substrates.6

        Next, I will show the extension of these results to halide perovskites7, 8 and superlattices of excitonic chalcogenides.9 These superlattices offer a unique opportunity to tailor the light-dispersion in the strong-coupling regime.9 I will then discuss opportunities for light conversion and modulation using these superlattice structures. I will further extend these results into semi-metallic 2D materials systems such as PtSe2 and show broadband unity absorption over scalable areas using the same.10

  Finally, if time permits, I will also present our recent work on scalable, localized quantum emitters from strained 2D semiconductors11 and control of light in magnetic semiconductors.12

      Our results highlight the vast opportunities available to tailor light-matter interactions12 and building practical devices with 2D semiconductors. I will conclude with a broad vision and prospects for 2D materials in the future of semiconductor opto-electronics and photonics.

References:

1.Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. ACS Nano 2014, 8, (2), 1102–1120.

2.Lynch, J.; Guarneri, L.; Jariwala, D.; van de Groep, J. Journal of Applied Physics 2022, 132, (9), 091102.

3.Jariwala, D.; Davoyan, A. R.; Wong, J.; Atwater, H. A. ACS Photonics 2017, 4, 2692-2970.

4.Brar, V. W.; Sherrott, M. C.; Jariwala, D. Chemical Society Reviews 2018, 47, (17), 6824-6844.

5.Anantharaman, S. B.; Jo, K.; Jariwala, D. ACS Nano 2021.

6.Zhang, H.; et al. Jariwala, D. Nature Communications 2020, 11, (1), 3552.

7.Anantharaman, S. B.; et al. Jariwala, D. Nano Letters 2021, 21, (14), 6245-6252.

8.Song, B.; et al. Jariwala, D. ACS Materials Letters 2021, 3, (1), 148-159.

9.Kumar, P.; et al. Jariwala, D. Nature nanotechnology 2022, 17 182–189.

10. Alfieri, A. D.;et al. Jariwala, D. Advanced Optical Materials 2022, 2202011.

11. Kim, G.;et al. Jariwala, D. ACS Nano 2022, 16, (6), 9651–9659.

12. Zhang, H.; et al. Jariwala, D. Nature Photonics 2022, 16, 311-317.

You are invited to attend a lecture on Thursday, March ^9th, 2023, at 10:00

Room 011, Kitot Building

Frequency interleaved ADC Terabit CMOS Frontend

Aviad Haran

M.Sc. student under the supervision of Prof. Eran Socher

Abstract

With the advance of CMOS technology in the recent years fully integrating digital and analog circuits together into one IC has become feasible. The increase in operation speeds of the devices and clever design techniques have enabled CMOS to be used at frequencies well within the mm-wave regime. Cheap manufacturing, reduction in size, increased resolution and integratability are to name just a few of the incentives for venturing into such frequencies in CMOS. Among the many fields which have benefited from these recent advancements, Terabit ADCs—practical applications considered—these systems require large, multi-chip system and an expensive fabrication technology. A minimalist design of a sub-ADC in one of these analog frontends requires at the very least a linear wide band amplifier or buffer and some sort of interleaving mechanism such as down converting wide band mixers. 

Typically the performance of on-chip wide band amplifier or mixer at 100GHz frequencies is severely hindered by ICs interconnect; and the performance of the amplifier and mixer is limited by their output capacitance leading to the dominant corner frequency and breakdown restriction on the devices when delivering large signals. Recent research has shown promising results for bandwidth extension in CMOS, achieving over 20 GHz bandwidth using RF methods and techniques and a new approach for amplifiers utilizing inductive peaking which extend the bandwidth of a given circuit while allowing large enough devices to deliver current and voltage to a given load without breaking down devices with minimal spurs. However, whether these approaches can be merged into a analog frontend and used for frequency interleaving is yet to be seen.

Presented herein are the design process, measurements, and results of a new wideband mixer topology—a double balanced Gilbert cell using an active load with inductors to extend the bandwidth by peaking the output impedance mitigating output capacitance and down converting a 20GHz bandwidth signal to baseband. The scalability of the approach was demonstrated by fabricating a two sub-ADCs channel on a signal die to imitate a 40GHz FI-ADC frontend.

סמינר זה יחשב כסמינר שמיעה לתלמידי תואר שני—-