EE Seminar: The Performance Enhancement of Nanowire-Based Electrical Sensing Systems for Biological and Medical Applications
Speaker: Itzhak Icin
M.Sc. student under the supervision of Prof. Fernando Patolsky
Wednesday, December 26th, 2018 at 15:00
Room 011, Kitot Bldg., Faculty of Engineering
The Performance Enhancement of Nanowire-Based Electrical Sensing Systems for Biological and Medical Applications
Abstract
In recent years, silicon nanowires-based sensors had evolved rapidly and currently evoke great interest. These devices are suitable for extremely sensitive label-free, real-time sensing for the discovery of biological and chemical species. Silicon nanowires sense by decoding electrical fields, which is the key to discovery in such small dimensions. In this presentation, I will introduce the historical aspects from the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) phase, through Ion-Sensitive Field-Effect Transistor (ISFET), to Silicon Nanowires Field-Effect Transistors (SiNW-FET), in electro-physical terms, interconnectivity of molecules to the surface, and diffusion and laminar flow. Two approaches are presented for creating the devices: a top-down approach and a bottom-up approach. The common sensing methods that are used today in the field are direct current (DC) or single low-frequency, and they are presented here with surface modifications for examining ionic strength and the concentration of cardiac troponin T protein. This work compares various recent electrical sensing methods, and focuses on an alternating current (AC) technique. Impedance-based detection method, combined with SiNW-FET sensors, has the ability to improve the sensitivity range and molecule reaction rate. Both the comparison and results of the experimental setup are presented, as well as implications for future research.
