Reconstruction of electric field in an M-S-M device, based on Transient current technique measurements - סמינר מחלקה פיסיקלית

סמינר זה יחשב כסמינר שמיעה לתלמידי תואר שני

15:00 vited to attend a lecture on Thursday, July 20^th, 2023

Room 011, Kitot Building

Reconstruction of electric field in an M-S-M device, based on Transient current technique measurements

By:

Odelya Amzallag

M.Sc. student under the supervision of Prof. Arie Ruzin

Abstract

The profile of the electric field in the active volume of a detector affects its performance. In many practical devices this information is missing or not well established (e.g., the ohmic contacts may be not ideal, or the material can sustain radiation-induced damage and change its electrical properties). Thus, the ability to deduce the electric field distribution inside a detector, from experimental results is essential.  Such ability allows for exploration of the nature of the crystal, traps and their properties, the nature of the contacts, the effect of traditional treatments etc. This is the main goal of the TCT characterization. In TCT characterization the system injects short laser pulses into the semiconductor detector, to produce free charge carriers in a known location. The applied external voltage separates the holes and the electrons and drifts them in opposite directions. The resulting current pulses at the contacts of the device are amplified, measured, and recorded.  The moving carriers induce displacement currents in the contacts. Reconstruction of the electric field from the current pulses is not straightforward and requires certain simplifications. To address this issue, we present a few approximations that were designed to improve accuracy of the calculations. These approximations were developed based on TCAD high accuracy simulations. The method was then implemented on experimental current pulses, as part of different experiments.