29/3/16

29 במרץ 2016, 10:00 
 
 

 

You are invited to attend a lecture

By

 

Prof. Juin J. Liou

 

Pegasus Distinguished Professor and Lockheed Martin Chair Professor of Engineering University of Central Florida, Orlando, Florida, USA Chang Jiang Scholar Endowed Professor, Ministry of Education, China Fellow of IEEE, Fellow of IET, Fellow of SIMTech

 

Electrostatic Discharge (ESD) Protection of Low-Voltage RF Integrated Circuits

 

Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components. It is an event in which a finite amount of charge is transferred from one object (i.e., human body) to the other (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and hence more than 35% of chip damages can be attributed to the ESD event.  As such, designing on-chip ESD structures to protect integrated circuits against the ESD stress is a high priority in the semiconductor industry. The continuing scaling of CMOS technology makes the ESD-induced failures even more prominent, and one can predict with certainty that the availability of effective and robust ESD protection solutions will become a critical and essential factor to the successful advancement and commercialization of the next-generation CMOS-based electronics.

The development of RF electronics went almost unnoticed until early 1980’s because, unlike Si VLSI, there were no mass consumer markets for such applications. Recently, this has been changed drastically due to the explosive growth in the civil wireless communications and internets. The modern RF integrated circuits are typically operated in a voltage range of 2-4 V. This relatively low-voltage operation imposes certain challenges to the design of RF ESD protection solutions.

An overview on the ESD sources, models, protection schemes, and testing will first be given in this talk. This is followed by presenting the recent advancement on ESD protection solutions for modern low-voltage RF integrated circuits as well as the exploration and evaluation of ESD protection solutions in emerging Si FinFET and nanowire technologies.

Biography of Juin J. Liou

 

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the Department of Electrical and Computer Engineering at the University of Central Florida (UCF), Orlando, Florida where he is now the UCF Pegasus Professor and Lockheed Martin St. Laurent Professor. His current research interests are Micro/nanoelectronics computer-aided design, RF device modeling and simulation, and electrostatic discharge (ESD) protection design and simulation.

        Dr. Liou holds 8 U.S. patents (5 more filed and pending), and has published 12 books (2 more in press), more than 280 journal papers (including 21 invited review articles), and more than 230 papers (including more than 100 keynote and invited papers) in international and national conference proceedings. He has been awarded more than $14.0 million of research contracts and grants from federal agencies (i.e., NSF, DARPA, Navy, Air Force, NASA, NIST), state government, and industry (i.e., Semiconductor Research Corp., Intel Corp., Intersil Corp., Lucent Technologies, Alcatel Space, Conexant Systems, Texas Instruments, Fairchild Semiconductor, National Semiconductor, Analog Devices, Maxim Integrated Systems, Allegro Microsystems, RF Micro Device, Lockheed Martin), and has held consulting positions with research laboratories and companies in the United States, China, Japan, Taiwan, and Singapore.  In addition, Dr. Liou has served as a technical reviewer for various journals and publishers, general chair or technical program chair for a large number of international conferences, regional editor (in USA, Canada and South America) of the Microelectronics Reliability journal, and guest editor of 7 special issues in the IEEE Journal of Emerging and Selected Topics in Circuits and Systems, Microelectronics Reliability, Solid-State Electronics, World Scientific Journal, and International Journal of Antennas and Propagation.

Dr. Liou received ten different awards on excellence in teaching and research from the University of Central Florida (UCF) and six different awards from the IEEE. Among them, he was awarded the UCF Pegasus Distinguished Professor (2009) – the highest honor bestowed to a faculty member at UCF, UCF Distinguished Researcher Award (four times: 1992, 1998, 2002, 2009) – the most of any faculty in the history of UCF, UCF Research Incentive Award (three times: 2000, 2005, 2010), UCF Trustee Chair Professor (2002), IEEE Joseph M. Biedenbach Outstanding Engineering Educator Award in 2004 for exemplary engineering teaching, research, and international collaboration, and IEEE Electron Devices Society Education Award in 2014 for promoting and inspiring global education and learning in the field of electron devices. His other honors are Fellow of IEEE, Fellow of IET, Fellow of Singapore Institute of Manufacturing Technology, Fellow of UCF-Analog Devices, Distinguished Lecturer of IEEE Electron Device Society (EDS), and Distinguished Lecturer of National Science Council. He holds several honorary professorships, including the Chang Jiang Scholar Endowed Professor of Ministry of Education, China – the highest honorary professorship in China, NSVL Distinguished Professor of National Semiconductor Corp., USA, International Honorary Chair Professor of National Taipei University of Technology, Taiwan, Honorary Endowed Professor of National Taiwan University of Science and Technology, Taiwan, Chang Gung Endowed Professor of Chang Gung University, Taiwan, Feng Chia Chair Professor of Feng Chia University, Taiwan, Chunhui Eminent Scholar of Peking University, China, Cao Guang-Biao Endowed Professor of Zhejiang University, China, Honorary Professor of Xidian University, China, Consultant Professor of Huazhong University of Science and Technology, China, and Courtesy Professor of Shanghai Jiao Tong University, China. Dr. Liou was a recipient of U.S. Air Force Fellowship Award and National University Singapore Fellowship Award.

        Dr. Liou has served as the IEEE EDS Vice-President of Regions/Chapters, IEEE EDS Treasurer, IEEE EDS Finance Committee Chair, Member of IEEE EDS Board of Governors, and Member of IEEE EDS Educational Activities Committee.

 

Tuesday, March 29, 2016, at 10:00

Room 011, Kitot Building

 

28.3.16

You are invited to attend a lecture

By

 

 Prof. Rakesh Kumar Singh

 

 

Indian Institute of Space and Technology (IIST) Thiruvananthapuram, Kerala, India

 

 

Non-invasive single-shot imaging through a scattering

 

layer using speckle interferometry

 

 

Optical imaging through complex scattering media is one of the major technical challenges with important applications in many research fields, ranging from biomedical imaging, astronomical imaging, to spatially multiplexed optical communications. Various techniques for imaging though scattering mediums have been proposed and discussed in the past. In this talk, we will discuss a new approach for non-invasive imaging through random scattering medium by speckle interferometry.  Principle of this technique lies on exploiting the complex nature of the two point correlation function of the random fields and combining digital holography with correlation optics.

Application of this technique in single shot and lens less correlation holography will be discussed. Possible extension of speckle interferometry to the vectorial random fields will also be covered in this talk.

 

Monday, March 28, 2016, at 11:00

 

Room 011, Kitot Building

28 במרץ 2016, 11:00 
011 Kitot  
28.3.16

 

זכיה בפרס קדר על הצטיינות יוצאת דופן במחקר מדעי.

20 מרץ 2016

 פרופ' עדי אריה מביה"ס להנדסת חשמל זכה בפרס קדר על הצטיינות יוצאת דופן במחקר מדעי.  הפרס, בסך 30,000 $, ניתן החל משנה שעברה אחת לשנה ל-4 חוקרים בכל התחומים באוניברסיטה, יוענק בטקס מיוחד במושב חבר הנאמנים הקרוב ב-20 למאי בשעה 9 בבוקר.

 

 

27.3.16

You are invited to attend a lecture

By

 

Dr. Igor D. Kaganovich

Plasma Physics Laboratory, Princeton University, NJ 08543, USA*

 

Nonlinear Self-Organized Structures in Plasmas - From Electron Kinetics to Nano Technology

 

Nanomaterials have the potential to revolutionize many fields of science and technology, including electronics, chemical synthesis, energy storage, and environmental and pharmaceutical applications.

Industry is investing billions of dollars to be part of the new material revolution that will come with nanomaterials. However, commercial applications of nanomaterials require reliable, predictable, large-scale and low cost synthesis.

Synthesis by plasma has the potential to satisfy these requirements, as well as to form improved nanomaterials. Plasma synthesis offers the possibility of high throughput, short nanostructure growth time, low cost, and optimized material properties.

These remarkable features of plasma synthesis are in great part due to the ability of plasma synthesis methods to sustain a higher yield production of nanomaterials both in volume and on surfaces, and often at lower process temperature and higher

chemical purity, than conventional chemical synthesis. A critical obstacle toward these goals is the lack of understanding of plasma synthesis processes. It is a joint challenge of plasma and material sciences to understand both plasma operation and

material synthesis with plasma.

In this talk I will give two examples of research performed in this area:

Collective interaction of an electron beam with plasma in etching machines and arc self-organization during nanomaterial synthesis.

 

Sunday, March 27, 2016, at 12:00

Room 011, Kitot Building

 

27 במרץ 2016, 13:00 
Kitot 011  
27.3.16

 

סמינר מחלקתי Rotem Halevi בית הספר להנדסה מכאנית

01 ביוני 2016, 15:00 
וולפסון 206  
0
סמינר מחלקתי Rotem Halevi בית הספר להנדסה מכאנית

 

 

 

 

 

School of Mechanical Engineering Seminar
Wednesday, June 1, 2016 at 15:00
Wolfson Building of Mechanical Engineering, Room 206

 

 

MECHANICAL INVESTIGATION OF AORTIC VALVE PROGRESSIVE CALCIFICATION USING REFINED COMPUTATIONAL MODELS

 

Rotem Halevi

 Prof. Rami Haj-Ali

The aortic valve (AV) is a bio-mechanical system responsible for the unidirectional flow between the left ventricle (LV) and the aorta.  Calcific aortic valve disease (CAVD) is characterized by calcification of the AV cusps leading to thickening and stiffening of the cusps' tissue until blood flow to the body is obstructed.  The CAVD affects approximately 30% of adults above 65 years old. 

The important role of mechanical strains/stresses and flow shear stresses (FSSs) in the initiation and regulation of the CAVD progression have been extensively studied.  However, there is lack of data on early stages of CAVD and the parameters of its growth since CAVD is usually asymptomatic until the disease is in advance stage. 

This study employed finite element models (FEMs), computation fluid dynamics (CFDs), fluid-structure interaction (FSI) models, and a mechano-biology models to investigate the calcification development. The study began with investigation the calcifications shapes and defining typical geometries. A new method for simulating the calcification growth based on Computed tomography (CT) scans were developed. Using this method, different stages of CAVD are modeled in numerical analyses. Finally, a newly proposed mechano-biology algorithm was used to predict calcification growth based on cusp strains. All analyses and methods were based on and calibrated to clinical data. The research provides new knowledge on the disease initiation and growth and may help find a better treatment for the disease.

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17.3.16

You are invited to attend a lecture

By

 

 

Dr. Moti Fridman

Faculty of Engineering, Bar-Ilan University

 

 

 

Spontaneous PT symmetry breaking

With topological insulators

 

In this talk we present a novel optical isolator based on the interaction of light and

Topological insulators.

 

This optical isolator does not require the application of external magnetic field and is based on spontaneous time reversal symmetry braking by topological insulators.

 

The device is comprised of tapered fiber with Sb2Te3 topological insulating crystal on its surface.

 

The interaction of light with the topological insulator rotates the input polarization in a similar manner to the Faraday rotation, but without the necessity in external magnetic field.

 

 

 

 

Thursday, March 17, 2016, at 15:00

 

Room 011, Wolfson Classroom Building

14 במרץ 2016, 15:00 
 
17.3.16

You are invited to attend a lecture

By

 

 

Dr. Moti Fridman

Faculty of Engineering, Bar-Ilan University

 

 

Spontaneous PT symmetry breaking

With topological insulators

 

In this talk we present a novel optical isolator based on the interaction of light and

Topological insulators.

 

This optical isolator does not require the application of external magnetic field and is based on spontaneous time reversal symmetry braking by topological insulators.

 

The device is comprised of tapered fiber with Sb2Te3 topological insulating crystal on its surface.

 

The interaction of light with the topological insulator rotates the input polarization in a similar manner to the Faraday rotation, but without the necessity in external magnetic field.

 

 

 

 

Thursday, March 17, 2016, at 15:00

 

Room 011, Wolfson Classroom Building

 

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