פרופ' אריה רוזין

סגל אקדמי בכיר בביה"ס להנדסת חשמל
ביה"ס להנדסת חשמל סגל אקדמי בכיר
ניווט מהיר:
פרופ' אריה רוזין
טלפון פנימי: 03-6405214
פקס: 03-6423508
אתר אישי
משרד: הנדסת חשמל מעבד, 228

דרושים משתלמים לתואר שני ושלישי - Graduate students are welcome

דרושים משתלמים המעוניינים לעסוק בחקר התקנים מוליכים למחצה, ננו רכיבים, וסימולציות מחשב של התקנים

Graduate students are are welcome to apply for positions in the fields  of: semiconductor devices, nano-devices and computer simulation of devices

תחומי מחקר

  • מוליכים למחצה מרוכבים (כגון Cd1-xZnxTe, InSb, Si1-xGex).
  • חיישני קרינה וחלקיקים (מקרינת גמא עד אינפרא-אדומה וטרה-הרץ)
  • נזקי קרינה למוליכים למחצה (היווצרות, השפעה מקרוסקופית והרפייה)
  • הדמיית מחשב של התקנים במימד אחד, בשנים ובשלושה מיימדים
  • מוליכים למחצה מקוזזים (ע"י מלכודות עמוקות)
  • מגעים וננו-מגעים למל"מ
  • מיקרוסקופיה של כוחות אטומיים
  • חקר מלכודות עמוקות ע"י Laplace-DLTS
  • ממריסטורים
  • מוליכים למחצה חדשניים
  • חומרים דו-מיימדיים

פרסומים

  1. Y. Nemirovsky, D. Goren, A. Ruzin, "A model for the growth of CdTe by Metal Organic Chemical Vapor Deposition", J. Electron. Mater. 20, No.8, pp. 609-613 (1991).
  2. Ruzin and Y. Nemirovsky, "Photon assisted growth of HgTe by Metalorganic Chemical Vapor Deposition", J. Electron. Mater. 22, pp. 281-288 (1993).
  3. Y. Nemirovsky, A. Ruzin and A. Bezinger, "UV photon assisted control of interface charge between CdTe substrates and Metalorganic Chemical Vapor Deposition CdTe epilayers", J. Electron. Mater. Vol. 22, No. 8, pp. 977-983 (1993).
  4. Ruzin, A. Bezinger and Y. Nemirovsky, "Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers", J. Appl. Phys. Vol. 73, No. 2, pp. 995-997 (1993).
  5. Y. Nemirovsky ,A. Ruzin, G. Asa and J. Gorelik, "Study of the charge collection efficiency of CdZnTe radiation detectors", J. Electron. Mater. Vol. 25, No. 8, pp. 1221-1231 (1996).
  6. R. Sudharsanan, T. Parodos, N. K. Karam, A. Ruzin and Y. Nemirovsky "CdZnTe photodiode arrays for medical imaging", J. Electron. Mater. Vol. 25, No. 8, pp. 1318-1322 (1996).
  7. Y. Nemirovsky ,A. Ruzin, G. Asa and J. Gorelik, "Study of  contacts to CdZnTe radiation detectors", J. Electron. Mater. Vol. 26, No. 6, pp. 756-764 (1997).
  8. Ruzin and Y. Nemirovsky, "Statistical Models for Charge Collection Efficiency and Variance in Semiconductor Spectrometers”, J. Appl. Phys. Vol. 82, No. 6, pp. 2754-2758 (1997).
  9. Ruzin and Y. Nemirovsky, "Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers”, J. Appl. Phys. Vol. 82, No. 9, pp. 4166-4171 (1997).
  10. Ruzin and Y. Nemirovsky, "Passivation and surface leakage in CdZnTe spectrometers”, Appl. Phys. Lett, Vol. 71, No. 15, pp. 2214-2215 (1997).
  11. Ruzin and Y. Nemirovsky, “Performance study of CdZnTe spectrometers”, Nucl. Inst. Meth. A 409, pp. 232-235 (1998).
  12. Y.Nemirovsky, G.Asa, C.G.Jacobson, A.ruzin and J.Gorelik, " Dark noise currents and energy resolution of CdZnTe spectrometers”, J. Electron. Mater, Vol.27, No.6; pp.800-806 (1998).
  13. Y.Nemirovsky, G.Asa, A.Ruzin and J.Gorelik, " Characterization of dark noise in CdZnTe spectrometers”, J. Electron. Mater, Vol.27, No.6; pp.807-812 (1998).
  14. G. Casse, M. Glaser, E. Grigoriev, F. Lemeilleur, A. Ruzin, B. Sopko, A. Taffard, “Impact of mesa and planar processes on radiation hardness of Si  detectors”, Nuovo Cimento, Vol. 112 A, N. 1-2, pp. 1-12 (1999).
  15. A. Ruzin, G. Casse and F. Lemeilleur and M. Glaser, “Studies of Radiation Hardness of Oxygen Enriched Silicon Detectors”, Nucl. Instr. and Meth. A 426, pp. 94-98 (1999).
  16. A. Ruzin, G. Casse, M. Glaser, R. Talamonti, A. Zanet, F. Lemeilleur, “Radiation Hardness of Silicon Detectors Manufactured on Epitaxial Material and FZ Bulk Enriched with Oxygen, Carbon, Tin and Platinum”, Nucl. Phys. B, vol. 78, pp. 645-649 (1999).
  17. A. Ruzin, G. Casse, M. Glaser, R. Talamonti, A. Zanet, F. Lemeilleur, S. Watts, “Comparison of Radiation Damage in Silicon for Proton and Neutron Irradiations”, IEEE Trans. Nucl. Sci., Vol. 46, No. 5, pp. 1310-1313 (October, 1999).
  18. G. Casse, M. Glaser, F. Lemeilleur, A. Ruzin, M. Wegrzecki, “Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion”, Nucl. Instr. and Meth. A 438, pp. 429-432 (1999).
  19. L. Fonseca, M. Lozano, F. Campabadal, C. Martínez, M. Ullán, B. S. Avset, A. Ruzin, F. Lemeilleur, E. Nossarzewska-Orlowska, “Silicon wafer oxygenation from SiO2 layers for radiation hard detectors”, Journal of Microelectronics Reliability, Volume 40, Issues 4-5, pp. 791-794 (April 2000).
  20. A. Ruzin, “Recent results from the RD48 (ROSE) collaboration”, Nucl. Instr. and Meth. A 447, pp. 116-125 (2000).
  21. A. Ruzin, G. Casse, M. Glaser, F. Lemeilleur, J. Mtheson, S. Watts, A. Zanet, “Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates”, Materials Science in Semiconductor Processing 3, pp. 257-261 (2000).
  22. A. Ruzin, Y. Rosenwaks, N. Croitoru, G. Lubarsky, “Nano-Scale Potential Profiles of Silicon Particle Detectors Measured by Atomic Force Microscopy”, Nucl. Instr. and Meth. A 461, pp. 229-232 (2001).
  23. G. Lindstrom, .. A. Ruzin, et al., “Radiation hard silicon detectors – developments by the RD48 (ROSE) collaboration”, Nucl. Instr. and Meth. A 466, pp. 308-326 (2001).
  24. G. Lindstrom, .. A. Ruzin, et al., “Develpements for radiation hard silicon detectors by defect engineering – results by the CERN RD48 (ROSE) collaboration”, Nucl. Instr. and Meth. A 465, pp. 60-69 (2001).
  25. A. Ruzin, S. Marunko, "Current mechanisms in silicon PIN structures processed with various technologies", Nucl. Instr. and Meth. A 492, pp. 411-422 (2002).
  26. A. Ruzin, “On Thermal Activation of Interface Generated Currents in High Resistivity Silicon Devices”, Nucl. Instr. and Meth. A 512, pp. 8-20 (2003).
  27. Arie Ruzin, S. Marunko, T. Tilchyn, “Comparison of bulk and interface generation in silicon PIN detectors”, Nucl. Instr. and Meth. A 512, pp. 21-29 (2003).
  28. M. Nathan1, O. Levy, I. Goldfarb, and A. Ruzin: "Monolithic coupling of a SU8 waveguide to a silicon photodiode", J. Appl. Phys. 94 (12), pp. 7932-7934 (DEC 15 2003).
  29. A. Ruzin, "Novel X- and gamma- ray sensors based on bulk-grown silicon-germanium", IEEE Trans. Electron. Dev. 50 (12), pp. 2581-2583 (DEC 2003).
  30. A. Ruzin, S. Marunko, Y. Gusakov, "Study of bulk grown silicon-germanium radiation detectors ", J. Appl. Phys., Vol.94, No.12, pp. 7932-7934, (15 December 2003).
  31. A. Ruzin, I. Torchinski, I. Goldfarb, "Electrical measurements of structural defects in Cd0.9Zn0.1Te by Atomic Force Microscopy based methods", Semicond. Sci. Technol. Vol. 19, pp. 644-647 (2004).
  32. Arie Ruzin, S. Marunko, N.V. Abrosimov, H. Riemann, "Dark properties and transient current response of Si0.95Ge0.05 n+p devices", Nucl. Instr. and Meth. A 518, pp. 373-375 (2004).
  33. Iris Visoly-Fisher, Sidney R. Cohen, Arie Ruzin, David Cahen, "How polycrystalline devices can outperform single-crystal ones: Thin film CdTe/CdS solar cells", J. Adv. Mater., Vol. 16, No. 11, pp. 879-883 (2004).
  34. M. Bruzzi, .. A. Ruzin, et al., "Radiation-hard semiconductor detectors for SuperLHC", Nucl. Instr. and Meth. A 541 (1-2), pp. 189-201 (2005).
  35. M. Moll, .. A. Ruzin, et al., "Development of radiation tolerant semiconductor detectors for the Super-LHC ", Nucl. Instr. and Meth. A 546 (1-2), pp. 99-107 (2005).
  36. Fretwurst E, Adey J, Al-Ajili A, .. A. Ruzin, et al., "Recent advancements in the development of radiation hard semiconductor detectors for S-LHC", Nucl. Instr. and Meth. A 552 (1-2), pp. 7-19 (2005).
  37. A.  Inberg, A.  Ruzin, I.  Torchinsky, V.  Bogush, Nathan  Croitoru, Y. Shacham-Diamand, "Annealing influence on electrical transport mechanism of electroless deposited very thin Ag(W) films",  Thin Solid Films Vol. 496, pp. 515-519 (2006).
  38. A. Ruzin, I. Torchinsky, "Computer simulation and AFM characterization of standard and irradiated SiPIN devices", Nucl. Phys. B. Vol. 150, pp. 172-176 (2006).
  39. I. Yaroslavski, A. Ruzin, "Characterization of radiation related damage in bulk-grown silicon-germanium detectors", Nucl. Instr. and Meth. A 562 (1), pp. 311-319 (2006).
  40. R. Daniel, A. Ruzin and Y. Roizin, " Trap generation in cycled hot electron injection programmed/hot hole erased silicon–oxide-nitride–oxide–silicon memories", J. of Appl. Phys, 99 (4): Art. No. 044502 (FEB 15 2006).
  41. Iris Visoly-Fisher, Sidney R. Cohen, Konstantin Gartsman, Arie Ruzin, and David Cahen, "Understanding the Beneficial Role of Grain Boundaries in Polycrystalline Solar Cells from Single-Grain-Boundary Scanning Probe Microscopy", ADVANCED FUNCTIONAL MATERIALS 16 (5), pp. 649-660 (MAR 20 2006).
  42. G.Cohen-Taguri, M.Levinshtein, A.Ruzin, I.Goldfarb, "Real-space identification of the CZT(110)surface atomic structure by scanning tunneling microscopy", Surface Sci., Vol. 602 (3),  pp. 712-723 (February 2008).
  43. Ramiz Daniel, Arie Ruzin, Yakov Roizin, and Yossi Shaham-Diamand, Subthreshold slope and transconductance degradation model in cycled hot electron injection programed/hot hole erased silicon-oxide-nitride-oxide-silicon memories", J. Appl. Phys. Vol. 104(5), pp. N/A (Sept. 2008).
  44. Gili Cohen-Taguri, Ori Sinkevich, Mario Levinshtein , Arie Ruzin, and Ilan Goldfarb, " Atomic structure and electrical properties of In(Te) nano-contacts on CdZnTe(110) by scanning probe microscopy", Adv. Funct. Mater., Vol. 20(2), 215(2010)..
  45. A. Ruzin, Y. Soifer, S. Marunko, Y. Gusakov, T. Fishman, and Z. Calahorra, "Study of insulator traps in InSb InSb/SiOx /Metal devices", J. Appl. Phys. 2107, 084510-1 (2010).
  46. Arie Ruzin, Nikolai Abrosimov, Piotr Litovchenko, "Study of lithium diffusion into silicon-germanium crystals", Nucl. Instr. and Meth. A 617, pp. 588-590 (2010).
  47. A. Ruzin, "Simulation of Schottky and Ohmic Contacts on CdTe", J. Appl. Phys., 109(1), 014509(2011).
  48. A. Ruzin, “Current simulation of symmetric contacts on CdTe”, Nucl. Instr. And Meth. A., 658(1), 118(2011).
  49. A. Affolder, A. Aleev,  P. P. Allport, et. al., “Silicon detectors for the sLHC”, Nucl. Instr. And Meth. A, 658(1), 11(2011).
  50. A. Ruzin, “Simulating Downscaling of Ohmic Contacts on Wide-Bandgap Low-Resistivity Semiconductors”, IEEE Trans. On Elect. Dev., Vol. 59(6), 1668(2012).
  51. A. Ruzin, “Response to "Comment on 'Simulation of Schottky and Ohmic Contacts on CdTe'", J. Appl. Phys., 111, 026103(2012). 
  52.  G. Cohen-Taguri, A. Ruzin, and I. Goldfarb, “Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps”, Appl. Phys. Lett. 100, 213116 (2012).
  53. A. Ruzin, O. Sinkevich, G. Cohen-Taguri, I. Goldfarb, "Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc- telluride", Appl. Phys. Lett., Vol. 101, 132108 (2012).
  54. A. Ruzin, "Simulation of metal-semiconductor-metal devices on heavily compensated Cd0.9Zn0.1Te",  J. Appl. Phys. 112, 104501 (2012).
  55. A. Ruzin, “Simulation of compensated and overcompensated Cd1-xZnxTe”, Nucl. Instr. and Meth. A, 718, 361(2013).
  56. A. Ruzin, "Scaling effects in ohmic contacts on semiconductors," Journal of Applied Physics, vol. 117,  164502  (2015).
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